to-92 plastic-encapsulate transistors 2SA719/2sa720 transistor (pnp) features for l ow- f requency p ower a mplification and d river a mplification maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 2SA719 2sa720 -30 -60 v v ceo collector-emitter voltage 2SA719 2sa720 -25 -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in typ m ax u nit collector-base breakdown voltage 2SA719 2sa720 v (br)cbo i c = -10ua, i e =0 -30 -60 v collector-emitter breakdown voltage 2SA719 2sa720 v (br)ceo i c = -10ma ,i b =0 -25 -50 v emitter-base breakdown voltage v (br)ebo i e = -10ua, i c =0 -5 v collector cut-off current i cbo v cb = -20v,i e =0 -0.1 ua emitter cut-off current i ebo v eb = -4v,i c =0 -0.1 ua h fe(1) v ce =-10v, i c = -150ma 85 340 dc current gain h fe(2) v ce =-10v, i c = -500ma 40 collector-emitter saturation voltage v ce(sat) i c =-300ma, i b = -30ma -0.6 v base-emitter saturation voltage v be(sat) i c = -300ma, i b =-30ma -1.5 v transition frequency f t v ce = -10v, i c = -50ma f = 200mhz 200 mhz collector output capacitance cob v cb =-10v,i e =0,f=1mh z 15 pf classification h fe(1) rank q r s range 85-170 120-240 170-340 to-92 1. emitter 2. collector 3. base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification % ) h e
-0.1 -1 -10 1 10 100 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -0 -3 -6 -9 -12 -15 -0 -50 -100 -150 -200 -250 -10 -100 10 100 1000 -1 -10 -100 -0.1 -1 -1 -10 -100 -10 -100 -1000 -0.0 -0.3 -0.6 -0.9 -1.2 -0.1 -1 -10 -100 -20 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v r (v) -500 -500 -5 common emitter v ce =-10v t a =25 transition frequency f t (mhz) collector current i c (ma) -3 p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) -0.3ma -0.4ma -0.5ma -0.6ma -0.8ma -1.0ma -0.9ma -0.7ma common emitter t a =25 -0.2ma i b =-0.1ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) common emitter v ce = -10v i c t a =25 t a =100 dc current gain h fe collector current i c (ma) -500 i c f t ?? h fe ?? =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) -2 -0.3 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter v ce =-10v 2SA719/2sa720 v be i c ?? t a = 1 0 0 t a = 2 5 collector current i c (ma) base-emmiter voltage v be (v) -500 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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